Abstract: A TCAD simulation method is proposed to simulate the instantaneous dose rate effect of a radiation-hardened SRAM with a million gate level of 0.18μm CMOS technology.Simulation results show that the protection ring layout design can effectively improve the instantaneous dose rate effect performance of the circuit.Using the dose rate radiation source,the experiment verification of simulation effectiveness is carried out.Simulation and experiment results show that the error between the photocurrent peak obtained by TCAD simulation and the photocurrent peak obtained by experiment is less than 5%，which confirms the effectiveness of the simulation method for studying the instantaneous dose rate effect.

Key words: Radiation-hardening, TCAD simulation, Dose rate, Instantaneous photocurrent